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Kingston DDR3/DDR3L MACBOOK PRO AND LAPTOP SO-DIMM 2GB/4GB/8GB RAM VALUE 1333/1600

RM 107.90
Kingston DDR3/DDR3L MACBOOK PRO AND LAPTOP SO-DIMM 2GB/4GB/8GB RAM VALUE 1333/1600 Ratings: 0 - 0 votes
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DESCRIPTION ( DDR3 )
This document describes ValueRAM's 1G x 64-bit (8GB) DDR3- 1600 CL11 SDRAM (Synchronous DRAM) 2Rx8, memory module, based on sixteen 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
• JEDECstandard1.5V(1.425V~1.575V)PowerSupply
• VDDQ=1.5V(1.425V~1.575V)
• 800MHzfCKfor1600Mb/sec/pin
• 8 independent internal bank
• ProgrammableCASLatency:11,10,9,8,7,6
• ProgrammableAdditiveLatency:0,CL-2,orCL-1clock
• 8-bit pre-fetch
• BurstLength:8(Interleavewithoutanylimit,sequentialwith starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• OnDieTerminationusingODTpin
• AverageRefreshPeriod7.8usatlowerthanTCASE85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh Command Time (tRFCmin)
Row Active Time (tRASmin) Maximum Operating Power UL Rating
Operating Temperature Storage Temperature
11 cycles 48.125ns (min.) 260ns (min.)
35ns (min.) 2.580 W*
94 V - 0
0o C to 85o C
-55o C to +100o C

DESCRIPTION ( DDR3L )
This document describes ValueRAM's 1G x 64-bit (8GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 2Rx8, low voltage, memory module, based on sixteen 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
• JEDECstandard1.35V(1.28V~1.45V)and1.5V(1.425V~ 1.575V) Power Supply
• VDDQ=1.35V(1.28V~1.45V)and1.5V(1.425V~1.575V)
• 800MHzfCKfor1600Mb/sec/pin
• 8 independent internal bank
• ProgrammableCASLatency:11,10,9,8,7,6
• ProgrammableAdditiveLatency:0,CL-2,orCL-1clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• OnDieTerminationusingODTpin
• AverageRefreshPeriod7.8usatlowerthanTCASE85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh Command Time (tRFCmin)
Row Active Time (tRASmin) Maximum Operating Power UL Rating
Operating Temperature Storage Temperature
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